MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IRFB812PBF-VB
650V 4.5A 60W 1.7Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs
TO-220ABRoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IRFB812PBF-VB
- Store part #
- C54177180
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C54177180
Stock & price checked 46 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹40.84 | ₹40.84 |
| 10+ | ₹39.98 | ₹399.80 |
| 50+ | ₹39.33 | ₹1,966.50 |
| 100+ | ₹38.90 | ₹3,890.00 |
1 × ₹40.84
₹40.84
excl. GST
₹48.19 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRFB812PBF-VB
₹40.84 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 170pF
- Current - Continuous Drain(Id)
- 4.5A
- Ciss-Input Capacitance
- 1.017nF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 1.7Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 48nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.04 g
Overview
Key features
- Low gate charge Qg, simplified drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage, and current
- RoHS compliant with directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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