Varnitronics
IRFH8311TRPBF-VB VBsemi Elec
VBsemi Elec

IRFH8311TRPBF-VB

N-Channel 30V 33A 3.75W Surface Mount DFN5x6-8

DFN5x6-8RoHSActive

MOSFET N-CH 30V 33A DFN5x6-8

Manufacturer
VBsemi Elec
Manufacturer part #
IRFH8311TRPBF-VB
Store part #
C5179509
Package / case
DFN5x6-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

30 in stock

#C5179509

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹151.52₹151.52
10+₹123.87₹1,238.70
30+₹110.15₹3,304.50
100+₹96.45₹9,645.00
500+₹84.25₹42,125.00
1,000+₹80.12₹80,120.00

1 × ₹151.52

₹151.52

excl. GST

₹178.79 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 5,000 per reel

IRFH8311TRPBF-VB

₹151.52 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
33A
Ciss-Input Capacitance
9.9nF
Pd - Power Dissipation
3.75W
RDS(on)
1.8mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
82nC@15V
Gate Threshold Voltage (Vgs(th))
2.5V

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
5,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.18 g

Overview

FSMOS MOSFETs, based on a unique device design, achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low threshold voltage (Vth) series is specifically optimized for synchronous rectification systems with low drive voltages.

Applications

  • OR gate function
  • Server

Key features

  • Trench power MOSFET
  • 100% Rg and UIS tested

Alternatives

Similar parts — check the datasheet before substituting.

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