MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
UMWDatasheet (PDF)
IRFR3410TR(UMW)
N-Channel 100V 30A 70W Surface Mount TO-252
TO-252ROHS CompliantActive
MOSFET N-CH 100V 30A TO-252
- Manufacturer
- UMW
- Manufacturer part #
- IRFR3410TR(UMW)
- Store part #
- C42420620
- Package / case
- TO-252
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,455 in stock
#C42420620
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹38.13 | ₹190.65 |
| 50+ | ₹29.97 | ₹1,498.50 |
| 150+ | ₹26.46 | ₹3,969.00 |
| 500+ | ₹22.09 | ₹11,045.00 |
| 2,500+ | ₹20.14 | ₹50,350.00 |
| 5,000+ | ₹18.97 | ₹94,850.00 |
5 × ₹38.13
₹190.65
excl. GST
₹224.97 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IRFR3410TR(UMW)
₹190.65 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 225pF
- Ciss-Input Capacitance
- 2.55nF
- Pd - Power Dissipation
- 70W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 30A
- Reverse Transfer Capacitance (Crss)
- 205pF
- RDS(on)
- 30mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 55nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.461 g
Overview
IRFR3410 employs advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.
Applications
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Key features
- Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 30 A
- On-resistance R<sub>DS(ON)</sub> < 30 mΩ at gate-source voltage V<sub>GS</sub> = 10 V
- High-density cell design for reduced R<sub>DS(ON)</sub>
- Fully characterized avalanche voltage and current
- High single-pulse avalanche energy E<sub>AS</sub> with excellent stability and consistency
- Superior thermal dissipation package
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | IPD068N10N3G(UMW)#C18208538UMW · TO-252 | UMW | TO-252 | 397 | ₹65.94 · 397 in stock | View |
 | IPD082N10N3G(UMW)#C18207554UMW · TO-252 | UMW | TO-252 | 504 | ₹95.80 · 504 in stock | View |
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