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IRFR48ZTRPBF Infineon
Infineon

IRFR48ZTRPBF

N-Channel 55V 42A 91W Surface Mount DPAK(TO-252AA)

DPAK(TO-252AA)ROHS3 CompliantActive

MOSFET N-CH 55V 42A DPAK(TO-252AA)

Manufacturer
Infineon
Manufacturer part #
IRFR48ZTRPBF
Store part #
C537982
Package / case
DPAK(TO-252AA)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

326 in stock

#C537982

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹111.91₹111.91
10+₹90.84₹908.40
30+₹80.19₹2,405.70
100+₹69.76₹6,976.00
500+₹63.45₹31,725.00
1,000+₹60.42₹60,420.00

1 × ₹111.91

₹111.91

excl. GST

₹132.05 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

IRFR48ZTRPBF

₹111.91 for 1 + GST

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Specifications

Output Capacitance(Coss)
290pF
Ciss-Input Capacitance
1.72nF
Pd - Power Dissipation
91W
Operating Temperature
-55℃~+175℃
Drain to Source Voltage
55V
Current - Continuous Drain(Id)
42A
Reverse Transfer Capacitance (Crss)
160pF
RDS(on)
11mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
60nC
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
4V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.8 g

Overview

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Key features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free

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IRFR48ZTRPBF Infineon — Single FETs, MOSFETs | Varnitronics