JSMSEMI

IRFR5410TR-JSM

P-Channel 100V 12A 40W Surface Mount TO-252

TO-252ROHS CompliantActive

MOSFET P-CH 100V 12A TO-252

Manufacturer: JSMSEMI
Manufacturer part #: IRFR5410TR-JSM
Store part #: C18190949
Package / case: TO-252
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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845 in stock

#C18190949

Stock & price checked 7 days ago

Quantity	Unit price	Pack price
5+	₹48.37	₹241.85
50+	₹37.35	₹1,867.50
150+	₹32.82	₹4,923.00
500+	₹29.15	₹14,575.00
2,500+	₹26.57	₹66,425.00
5,000+	₹24.83	₹1,24,150.00

Quantity (min 5, multiples of 5)

5 × ₹48.37

₹241.85

excl. GST

₹285.38 incl. 18% GST

Need volume or a scheduled delivery? Request a quote

Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 2,500 per reel

IRFR5410TR-JSM

₹241.85 for 5 + GST

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Specifications

Drain to Source Voltage: 100V
Operating Temperature: -55℃~+150℃
Output Capacitance(Coss): 260pF
Current - Continuous Drain(Id): 12A
Ciss-Input Capacitance: 760pF
Pd - Power Dissipation: 40W
Reverse Transfer Capacitance (Crss): 170pF
RDS(on): 200mΩ@10V
Number: 1 P-Channel
Gate Charge(Qg): 25nC@10V
Gate Threshold Voltage (Vgs(th)): 3V
Type: P-Channel

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 2,500 / Reel
Sold per: Piece
Minimum order: 5 (multiples of 5)
Unit weight: 0.441 g

Overview

This P-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Key features

Drain-source voltage (VDS) = -100V, drain current (ID) = -12A, on-resistance (RDS(ON)) < 200mΩ at gate-source voltage (VGS) = -10V
Low gate charge.
RoHS-compliant devices available.
Advanced high cell density trench technology for ultra-low RDS(ON).
Excellent package with superior thermal dissipation performance.