Varnitronics
IRFS4020TRLPBF Infineon
Infineon

IRFS4020TRLPBF

N-Channel 200V 18A 100W Surface Mount D2PAK

D2PAKROHS CompliantDiscontinued

MOSFET N-CH 200V 18A D2PAK

Manufacturer
Infineon
Manufacturer part #
IRFS4020TRLPBF
Store part #
C538015
Package / case
D2PAK
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

24 in stock

#C538015

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹174.49₹174.49
10+₹170.59₹1,705.90
30+₹167.98₹5,039.40
100+₹165.15₹16,515.00

1 × ₹174.49

₹174.49

excl. GST

₹205.90 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 800 per reel

IRFS4020TRLPBF

₹174.49 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
200V
Output Capacitance(Coss)
91pF
Current - Continuous Drain(Id)
18A
Pd - Power Dissipation
100W
RDS(on)
105mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
29nC@10V
Vgs
±20V
Type
N-Channel

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Discontinued
ECCN
EAR99
Standard pack
800 / Reel
Sold per
Piece
Minimum order
1
Unit weight
2 g

Overview

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMl. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Key features

  • Key parameters optimized for Class-D audio amplifier applications
  • Low Rpson for improved efficiency
  • Low QG and QSW for better THD and improved efficiency
  • Low QRR for better THD and lower EMI
  • 175°C operating junction temperature for ruggedness
  • Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier

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