MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
ISC027N10NM6ATMA1-VB
N-Channel 100V 135A 8.3W Surface Mount DFN-8(5x6)
DFN-8(5x6)RoHSActive
MOSFET N-CH 100V 135A DFN-8(5x6)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- ISC027N10NM6ATMA1-VB
- Store part #
- C45662551
- Package / case
- DFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C45662551
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹339.83 | ₹339.83 |
| 10+ | ₹295.41 | ₹2,954.10 |
| 30+ | ₹267.55 | ₹8,026.50 |
| 100+ | ₹202.46 | ₹20,246.00 |
| 500+ | ₹189.61 | ₹94,805.00 |
| 1,000+ | ₹183.96 | ₹1,83,960.00 |
1 × ₹339.83
₹339.83
excl. GST
₹401.00 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
ISC027N10NM6ATMA1-VB
₹339.83 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 470pF
- Current - Continuous Drain(Id)
- 135A
- Ciss-Input Capacitance
- 7.6nF
- Pd - Power Dissipation
- 8.3W
- Reverse Transfer Capacitance (Crss)
- 225pF
- RDS(on)
- 4mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 84nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Overview
Key features
- Junction temperature 175 °C
- SGT technology power MOSFET
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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