MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
ISZ080N10NM6-VB
136W 100V 50A 11mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs
DFN-8(3x3)RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- ISZ080N10NM6-VB
- Store part #
- C52711413
- Package / case
- DFN-8(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C52711413
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹110.58 | ₹110.58 |
| 10+ | ₹89.99 | ₹899.90 |
| 30+ | ₹79.58 | ₹2,387.40 |
| 100+ | ₹69.39 | ₹6,939.00 |
| 500+ | ₹63.09 | ₹31,545.00 |
| 1,000+ | ₹60.06 | ₹60,060.00 |
1 × ₹110.58
₹110.58
excl. GST
₹130.48 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
ISZ080N10NM6-VB
₹110.58 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 470pF
- Ciss-Input Capacitance
- 5nF
- Pd - Power Dissipation
- 136W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 225pF
- RDS(on)
- 11mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.58 g
Overview
Key features
- Junction temperature 175 °C
- SGT technology power MOSFET
- RoHS compliant
- DFN 3x3 package
Alternatives
Similar parts — check the datasheet before substituting.
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