MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
JSMSEMIDatasheet (PDF)
JSM022N04QG5
40V 205A Surface Mount PDFN-8L(5x6)
PDFN-8L(5x6)ROHS CompliantActive
MOSFET 40V 205A PDFN-8L(5x6)
- Manufacturer
- JSMSEMI
- Manufacturer part #
- JSM022N04QG5
- Store part #
- C49206922
- Package / case
- PDFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
732 in stock
#C49206922
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹59.55 | ₹59.55 |
| 10+ | ₹46.50 | ₹465.00 |
| 30+ | ₹40.85 | ₹1,225.50 |
| 100+ | ₹33.91 | ₹3,391.00 |
| 500+ | ₹30.64 | ₹15,320.00 |
| 1,000+ | ₹28.91 | ₹28,910.00 |
1 × ₹59.55
₹59.55
excl. GST
₹70.27 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
JSM022N04QG5
₹59.55 for 1 + GST
Specifications
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 1.6nF
- Current - Continuous Drain(Id)
- 205A
- Ciss-Input Capacitance
- 3.2nF
- Pd - Power Dissipation
- 157W
- Reverse Transfer Capacitance (Crss)
- 75pF
- RDS(on)
- 1.5mΩ@10V;2.2mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 46nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.184 g
Overview
- Split-gate trench MOSFET technology - Superior thermal dissipation package - High-density cell design for low on-resistance RDS(ON) - Moisture Sensitivity Level 1 - Epoxy meets UL 94 V-0 flammability rating - Halogen-free
Applications
- Power switching applications
- Uninterruptible power supplies
- DC-DC converters
Key features
- Drain-source voltage V<sub>DS</sub> 40V
- Drain current I<sub>D</sub> 150A
- On-resistance R<sub>DS(ON)</sub> (at gate-source voltage V<sub>GS</sub> = 10V) <1.5mΩ
- On-resistance R<sub>DS(ON)</sub> (at gate-source voltage V<sub>GS</sub> = 4.5V) <2.2mΩ
- 100% avalanche capability tested
- 100% V<sub>DS</sub> transition tested
Alternatives
Similar parts — check the datasheet before substituting.
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