Varnitronics
JSM5N10M JSMSEMI
JSMSEMI

JSM5N10M

N-Channel 100V 5A 1.25W Surface Mount SOT-23-3L

SOT-23-3LROHS CompliantActive

MOSFET N-CH 100V 5A SOT-23-3L

Manufacturer
JSMSEMI
Manufacturer part #
JSM5N10M
Store part #
C42449152
Package / case
SOT-23-3L
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,895 in stock

#C42449152

Stock & price checked 6 days ago

QuantityUnit pricePack price
5+₹11.93₹59.65
50+₹9.41₹470.50
150+₹8.14₹1,221.00
500+₹7.18₹3,590.00
3,000+₹6.59₹19,770.00
6,000+₹6.20₹37,200.00

5 × ₹11.93

₹59.65

excl. GST

₹70.39 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

JSM5N10M

₹59.65 for 5 + GST

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Specifications

Drain to Source Voltage
100V
Current - Continuous Drain(Id)
5A
Output Capacitance(Coss)
40pF
Ciss-Input Capacitance
295pF
Pd - Power Dissipation
1.25W
Reverse Transfer Capacitance (Crss)
15pF
RDS(on)
400mΩ@4.5V
Number
1 N-channel
Gate Threshold Voltage (Vgs(th))
2.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.039 g

Overview

JSM5N10M is an N-channel logic-level enhancement-mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications requiring low line power dissipation in ultra-compact SMT packages.

Applications

  • Laptop power management
  • Portable devices
  • Battery-powered systems

Key features

  • 100V/5.0A, RDS(ON) = 220mΩ (typ.) @VGS = 4.5V
  • 100V/2.5A, RDS(ON) = 280mΩ (typ.) @VGS = 2.5V
  • Ultra-high voltage design with extremely low RDS(ON)
  • Excellent on-resistance and maximum DC current capability
  • Fully RoHS compliant
  • SOT23-3L package

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