MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
MICROCHIPDatasheet (PDF)
LND150K1-G
N-Channel 500V 13mA 0.36W Surface Mount SOT-23
SOT-23ROHS3 CompliantActive
MOSFET N-CH 500V 13mA SOT-23
- Manufacturer
- MICROCHIP
- Manufacturer part #
- LND150K1-G
- Store part #
- C145393
- Package / case
- SOT-23
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
28 in stock
#C145393
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹133.86 | ₹133.86 |
| 10+ | ₹109.44 | ₹1,094.40 |
| 30+ | ₹96.14 | ₹2,884.20 |
| 100+ | ₹80.89 | ₹8,089.00 |
| 500+ | ₹74.34 | ₹37,170.00 |
| 1,000+ | ₹71.30 | ₹71,300.00 |
1 × ₹133.86
₹133.86
excl. GST
₹157.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
LND150K1-G
₹133.86 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.5pF
- Ciss-Input Capacitance
- 10pF
- Pd - Power Dissipation
- 360mW
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 500V
- Current - Continuous Drain(Id)
- 13mA
- Reverse Transfer Capacitance (Crss)
- 1pF
- RDS(on)
- 850Ω@0V
- Number
- 1 N-channel
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.03 g
Overview
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Applications
- Solid state relays
- Normally-on switches
- Converters
- Power supply circuits
- Constant current sources
- Input protection circuits
Key features
- No secondary breakdown
- Low gate drive power requirement
- Easy to parallel
- Excellent thermal stability
- Integrated body diode
- High input impedance and low Ciss
- ESD gate protection
Alternatives
Similar parts — check the datasheet before substituting.
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