MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
MGSF1N03LT3G-VB
N-Channel 30V 6.5A 1.7W Surface Mount SOT-23(TO-236)
SOT-23(TO-236)RoHSActive
MOSFET N-CH 30V 6.5A SOT-23(TO-236)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- MGSF1N03LT3G-VB
- Store part #
- C19190102
- Package / case
- SOT-23(TO-236)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
100 in stock
#C19190102
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹13.24 | ₹66.20 |
| 50+ | ₹10.57 | ₹528.50 |
| 150+ | ₹9.23 | ₹1,384.50 |
| 500+ | ₹8.23 | ₹4,115.00 |
| 3,000+ | ₹7.44 | ₹22,320.00 |
| 6,000+ | ₹7.03 | ₹42,180.00 |
5 × ₹13.24
₹66.20
excl. GST
₹78.12 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
MGSF1N03LT3G-VB
₹66.20 for 5 + GST
Specifications
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 45pF
- Current - Continuous Drain(Id)
- 6.5A
- Ciss-Input Capacitance
- 335pF
- Pd - Power Dissipation
- 1.7W
- Reverse Transfer Capacitance (Crss)
- 17pF
- RDS(on)
- 30mΩ@10V;33mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 4.5nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.1V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.019 g
Overview
IRFB4110 employs advanced trench technology to achieve excellent on-resistance RDS(ON) and low gate charge, suitable for a wide range of applications.
Applications
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Key features
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- RoHS compliant with directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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