MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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MICROCHIPDatasheet (PDF)
MSC080SMA120B
1.2kV 40A 231W 100mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS
TO-247ROHS3 CompliantActive
SiC N-Channel Power MOSFET
- Manufacturer
- MICROCHIP
- Manufacturer part #
- MSC080SMA120B
- Store part #
- C5127757
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C5127757
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,795.75 | ₹2,795.75 |
| 10+ | ₹2,670.87 | ₹26,708.70 |
| 30+ | ₹2,454.68 | ₹73,640.40 |
| 90+ | ₹2,266.06 | ₹2,03,945.40 |
1 × ₹2,795.75
₹2,795.75
excl. GST
₹3,298.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
MSC080SMA120B
₹2,795.75 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 91pF
- Current - Continuous Drain(Id)
- 40A
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 231W
- Reverse Transfer Capacitance (Crss)
- 6.2pF
- RDS(on)
- 100mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 72nC
- Gate Threshold Voltage (Vgs(th))
- 2.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 12.6 g
Overview
The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B device is a 1200 V, 80 mΩ SiC MOSFET in a TO-247 package.
Applications
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Key features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, T_J(max)=175 ℃
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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 | ACM120B028TD#C50132432AnBon · TO-247-3L | AnBon | TO-247-3L | 20 | ₹685.58 · 20 in stock | View |
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