Varnitronics
MSISH101DN-T1-GE3 MSKSEMI
MSKSEMI

MSISH101DN-T1-GE3

31.2W 30V 70A 6.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs

DFN-8L(3x3)RoHSActive
Manufacturer
MSKSEMI
Manufacturer part #
MSISH101DN-T1-GE3
Store part #
C51908760
Package / case
DFN-8L(3x3)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

670 in stock

#C51908760

Stock & price checked 4 days ago

QuantityUnit pricePack price
5+₹35.68₹178.40
50+₹28.09₹1,404.50
150+₹24.83₹3,724.50
500+₹20.76₹10,380.00
2,500+₹18.96₹47,400.00
5,000+₹17.87₹89,350.00

5 × ₹35.68

₹178.40

excl. GST

₹210.51 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 5,000 per reel

MSISH101DN-T1-GE3

₹178.40 for 5 + GST

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Specifications

Output Capacitance(Coss)
529pF
Ciss-Input Capacitance
4.32nF
Pd - Power Dissipation
31.2W
Drain to Source Voltage
30V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
70A
Reverse Transfer Capacitance (Crss)
487pF
RDS(on)
6.5mΩ@10V
Number
1 P-Channel
Gate Charge(Qg)
45nC
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
1.6V
Type
P-Channel

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
5,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.108 g

Overview

MSISH101DN-T1-GE3 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operates at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply

Key features

  • VDS = -30V, ID = -70A
  • RDS(ON) < 9.3 mΩ @ VGS = -10V

Alternatives

Similar parts — check the datasheet before substituting.

MSiSH101DN#C51908759MSKSEMI · DFN-8L(3x3)₹35.65 · 830 in stockView

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