MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
NDP6060L
N-Channel 60V 48A 100W Through Hole TO-220
TO-220ROHS3 CompliantActive
MOSFET N-CH 60V 48A TO-220
- Manufacturer
- onsemi
- Manufacturer part #
- NDP6060L
- Store part #
- C158097
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
79 in stock
#C158097
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹513.54 | ₹513.54 |
| 10+ | ₹435.27 | ₹4,352.70 |
| 50+ | ₹302.32 | ₹15,116.00 |
| 100+ | ₹255.15 | ₹25,515.00 |
| 500+ | ₹233.60 | ₹1,16,800.00 |
| 800+ | ₹223.64 | ₹1,78,912.00 |
1 × ₹513.54
₹513.54
excl. GST
₹605.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
NDP6060L
₹513.54 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 800pF
- Ciss-Input Capacitance
- 2nF
- Pd - Power Dissipation
- 100W
- Operating Temperature
- -65℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 48A
- Reverse Transfer Capacitance (Crss)
- 400pF
- RDS(on)
- 40mΩ@5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@5V
- Vgs
- ±16V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.16 g
Overview
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Applications
- automotive
- DC/DC converters
- PWM motor controls
- other battery powered circuits
Key features
- These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
- 48A, 60V. RDS(ON)=0.025Ω@VGS = 5V.
- Low drive requirements allowing operation directly from logic drivers. VGS(TH)<2.0V.
- Critical DC electrical parameters specified at elevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating.
- High density cell design for extremely low RDS(ON).
- TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.
Alternatives
Similar parts — check the datasheet before substituting.
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