MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
NP80N04MHE-S18-AY-VB
N-Channel 40V 110A 3.13W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 40V 110A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- NP80N04MHE-S18-AY-VB
- Store part #
- C29779473
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C29779473
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹110.07 | ₹110.07 |
| 10+ | ₹88.65 | ₹886.50 |
| 50+ | ₹77.94 | ₹3,897.00 |
| 100+ | ₹67.22 | ₹6,722.00 |
| 500+ | ₹60.92 | ₹30,460.00 |
| 1,000+ | ₹57.56 | ₹57,560.00 |
1 × ₹110.07
₹110.07
excl. GST
₹129.88 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
NP80N04MHE-S18-AY-VB
₹110.07 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 750pF
- Current - Continuous Drain(Id)
- 110A
- Ciss-Input Capacitance
- 2.9nF
- Pd - Power Dissipation
- 3.13W
- Reverse Transfer Capacitance (Crss)
- 310pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 130nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2 g
Overview
Applications
- Synchronous Rectification Power Supplies
- N-Channel MOSFET
Key features
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
Alternatives
Similar parts — check the datasheet before substituting.
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