MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
NTMFS4D2N10MDT1G-HXY
176W 100V 120A 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- NTMFS4D2N10MDT1G-HXY
- Store part #
- C51949336
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
95 in stock
#C51949336
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹231.74 | ₹231.74 |
| 10+ | ₹199.52 | ₹1,995.20 |
| 30+ | ₹179.33 | ₹5,379.90 |
| 100+ | ₹158.51 | ₹15,851.00 |
| 500+ | ₹149.05 | ₹74,525.00 |
| 1,000+ | ₹144.97 | ₹1,44,970.00 |
1 × ₹231.74
₹231.74
excl. GST
₹273.45 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
NTMFS4D2N10MDT1G-HXY
₹231.74 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.144 g
Overview
The NTMFS4D2N10MDT1G employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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