Varnitronics
NTP190N65S3HF onsemi
onsemi

NTP190N65S3HF

N-Channel 650V 20A 162W Through Hole TO-220

TO-220ROHS3 CompliantActive

MOSFET N-CH 650V 20A TO-220

Manufacturer
onsemi
Manufacturer part #
NTP190N65S3HF
Store part #
C604472
Package / case
TO-220
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

22 in stock

#C604472

Stock & price checked 46 h ago

QuantityUnit pricePack price
1+₹487.68₹487.68
10+₹477.11₹4,771.10
50+₹469.98₹23,499.00
100+₹462.86₹46,286.00

1 × ₹487.68

₹487.68

excl. GST

₹575.46 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 50 per tube

NTP190N65S3HF

₹487.68 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
650V
Output Capacitance(Coss)
30pF
Current - Continuous Drain(Id)
20A
Ciss-Input Capacitance
1.61nF
Pd - Power Dissipation
162W
RDS(on)
190mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
34nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
3.4 g

Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter

Key features

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 159 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 34 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)
  • 100% Avalanche Tested
  • These Devices are Pb−Free and are RoHS Compliant

Alternatives

Similar parts — check the datasheet before substituting.

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WTM20N65AP#C48642341WPMtek · TO-220₹145.60 · 43 in stockView
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