MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
NTP5D0N15MC
N-Channel 150V 139A 214W Through Hole TO-220
TO-220ROHS3 CompliantActive
MOSFET N-CH 150V 139A TO-220
- Manufacturer
- onsemi
- Manufacturer part #
- NTP5D0N15MC
- Store part #
- C898811
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C898811
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹804.61 | ₹804.61 |
| 10+ | ₹791.17 | ₹7,911.70 |
| 30+ | ₹782.28 | ₹23,468.40 |
| 100+ | ₹773.39 | ₹77,339.00 |
1 × ₹804.61
₹804.61
excl. GST
₹949.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per tube
NTP5D0N15MC
₹804.61 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.9nF
- Ciss-Input Capacitance
- 6.3nF
- Pd - Power Dissipation
- 214W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 139A
- Reverse Transfer Capacitance (Crss)
- 13pF
- RDS(on)
- 5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 75nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 800 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.33 g
Overview
This power MOSFET is designed to withstand high energy in avalanche and commutation modes. Intended for low-voltage, high-speed switching applications in power supplies, converters, and motor drives, these devices are particularly suited for bridge circuits with stringent requirements on diode speed and commutation SOA, while providing additional safety margin against unexpected voltage transients.
Applications
- Synchronous rectification for ATX/server/telecom power supplies
- Motor drives and UPS
- Micro solar inverters
Key features
- Shielded Gate MOSFET technology
- Maximum RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A
- Qrr 50% lower than competing MOSFET suppliers
- Reduced switching noise/EMI
- 100% tested for unclamped inductive switching (UIL)
- Lead-free, halogen-free/BFR-free, RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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