MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
NTPF360N65S3H-VB
N-Channel 650V 10A 320W Through Hole TO-220F
TO-220FRoHSActive
MOSFET N-CH 650V 10A TO-220F
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- NTPF360N65S3H-VB
- Store part #
- C22357217
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22357217
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹185.27 | ₹185.27 |
| 10+ | ₹153.35 | ₹1,533.50 |
| 50+ | ₹135.70 | ₹6,785.00 |
| 100+ | ₹115.75 | ₹11,575.00 |
| 500+ | ₹106.92 | ₹53,460.00 |
| 1,000+ | ₹102.93 | ₹1,02,930.00 |
1 × ₹185.27
₹185.27
excl. GST
₹218.62 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
NTPF360N65S3H-VB
₹185.27 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 80pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 2.3nF
- Pd - Power Dissipation
- 320W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 95nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.4 g
Overview
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Key features
- Low figure-of-merit (FOM) Rₒₙ×Q₉
- Low input capacitance (Cᵢₛₛ)
- Reduced switching and conduction losses
- Ultra low gate charge (Ω₉)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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