Varnitronics
onsemi

NTPF450N80S3Z

N-Channel 800V 11A 29.5W Through Hole TO-220F

TO-220FROHS3 CompliantActive

MOSFET N-CH 800V 11A TO-220F

Manufacturer
onsemi
Manufacturer part #
NTPF450N80S3Z
Store part #
C2902304
Package / case
TO-220F
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

25 in stock

#C2902304

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹294.22₹294.22
10+₹286.84₹2,868.40
30+₹282.06₹8,461.80
100+₹277.06₹27,706.00

1 × ₹294.22

₹294.22

excl. GST

₹347.18 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

NTPF450N80S3Z

₹294.22 for 1 + GST

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Specifications

Output Capacitance(Coss)
15pF
Ciss-Input Capacitance
885pF
Pd - Power Dissipation
29.5W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
800V
Current - Continuous Drain(Id)
11A
Reverse Transfer Capacitance (Crss)
27pF
RDS(on)
450mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
19.3nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
3.8V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.494 g

Overview

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Applications

  • Adapters / Chargers
  • LED Lighting
  • AUX Power
  • Audio
  • Industrial Power

Key features

  • Typ. RDS(on)=380 mΩ
  • Ultra Low Gate Charge (Typ. Qg=19.3 nC)
  • Low Stored Energy in Output Capacitance (Eoss=2.2 μJ @ 400 V)
  • 100% Avalanche Tested
  • ESD Improved Capability with Zener Diode
  • RoHS Compliant

Alternatives

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