Varnitronics
NVB110N65S3F onsemi
onsemi

NVB110N65S3F

N-Channel 650V 30A 240W Surface Mount D2PAK

D2PAKROHS3 CompliantActive

MOSFET N-CH 650V 30A D2PAK

Manufacturer
onsemi
Manufacturer part #
NVB110N65S3F
Store part #
C604525
Package / case
D2PAK
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

16 in stock

#C604525

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹763.37₹763.37
10+₹662.35₹6,623.50
30+₹600.60₹18,018.00
100+₹549.01₹54,901.00

1 × ₹763.37

₹763.37

excl. GST

₹900.78 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 800 per reel

NVB110N65S3F

₹763.37 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
650V
Output Capacitance(Coss)
50pF
Current - Continuous Drain(Id)
30A
Ciss-Input Capacitance
2.56nF
Pd - Power Dissipation
240W
RDS(on)
110mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
58nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
800 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.73 g

Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

Applications

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV

Key features

  • 700 V (TJ = 150°C)
  • Typ. RDS(on) = 93 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 58 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF)
  • 100% Avalanche Tested
  • Qualified with AEC−Q101
  • These Devices are Pb−Free and are RoHS Compliant

Alternatives

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