onsemi

NVBLS1D7N08H

237.5W 80V 241.3A 1.7mΩ@10V 1 N-channel N-Channel H-PSOF-8L Single FETs, MOSFETs RoHS

H-PSOF-8LROHS3 CompliantActive

Manufacturer: onsemi
Manufacturer part #: NVBLS1D7N08H
Store part #: C2902188
Package / case: H-PSOF-8L
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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50 in stock

#C2902188

Stock & price checked 9 days ago

Quantity	Unit price	Pack price
1+	₹646.03	₹646.03
10+	₹552.82	₹5,528.20
30+	₹497.62	₹14,928.60
100+	₹441.55	₹44,155.00
500+	₹415.70	₹2,07,850.00
1,000+	₹404.18	₹4,04,180.00

Quantity (min 1)

1 × ₹646.03

₹646.03

excl. GST

₹762.32 incl. 18% GST

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GST invoice with every order
Standard pack: 2,000 per reel

NVBLS1D7N08H

₹646.03 for 1 + GST

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Specifications

Output Capacitance(Coss): 1.059nF
Ciss-Input Capacitance: 7.675nF
Pd - Power Dissipation: 237.5W
Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 241.3A
Reverse Transfer Capacitance (Crss): 41pF
RDS(on): 1.7mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 121nC@10V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 4V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 2,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.04 g

Overview

SUPERFET III MOSFETs are a new series of high-voltage super junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge characteristics. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III Easy Drive MOSFET series helps address EMI issues and simplifies design implementation.