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NVD360N65S3T4G onsemi
onsemi

NVD360N65S3T4G

N-Channel 650V 10A 83W Surface Mount DPAK

DPAKROHS3 CompliantActive

MOSFET N-CH 650V 10A DPAK

Manufacturer
onsemi
Manufacturer part #
NVD360N65S3T4G
Store part #
C3277862
Package / case
DPAK
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

6 in stock

#C3277862

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹294.26₹294.26
10+₹289.74₹2,897.40
30+₹286.95₹8,608.50
100+₹283.94₹28,394.00

1 × ₹294.26

₹294.26

excl. GST

₹347.23 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

NVD360N65S3T4G

₹294.26 for 1 + GST

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Specifications

Output Capacitance(Coss)
17.4pF
Ciss-Input Capacitance
756pF
Pd - Power Dissipation
83W
Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
10A
Reverse Transfer Capacitance (Crss)
1.53pF
RDS(on)
360mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
16.8nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
4.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.424 g

Overview

RM25N30DN utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Applications

  • Switch-mode power supplies and general-purpose applications
  • Hard-switching and high-frequency circuits
  • Uninterruptible power supplies

Key features

  • Ultra Low Gate Charge & Low Effective Output Capacitance
  • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
  • 100% Avalanche Tested
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

Alternatives

Similar parts — check the datasheet before substituting.

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