MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
NVDS015N15MCT4G
150V 15mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS
DPAKROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- NVDS015N15MCT4G
- Store part #
- C887747
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C887747
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹476.31 | ₹476.31 |
| 10+ | ₹467.93 | ₹4,679.30 |
| 30+ | ₹462.55 | ₹13,876.50 |
| 100+ | ₹456.96 | ₹45,696.00 |
1 × ₹476.31
₹476.31
excl. GST
₹562.05 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
NVDS015N15MCT4G
₹476.31 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 595pF
- Ciss-Input Capacitance
- 2.12nF
- Pd - Power Dissipation
- 3.1W;107.1W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 10.5A;61.3A
- Reverse Transfer Capacitance (Crss)
- 10.5pF
- RDS(on)
- 15mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 27nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.494 g
Overview
Super-junction power MOSFETs are a revolutionary technology for high-voltage power MOSFETs, designed based on the super-junction (SJ) principle. Multi-epitaxial SJ MOSFETs offer devices with ultra-low switching, commutation, and conduction losses, and their high robustness makes resonant switching applications more reliable, efficient, compact, and low-temperature.
Applications
- Primary side of 48 V isolated bus
- Synchronous rectification (SR) for medium voltage (MV) secondary applications
Key features
- Shield Gate MOSFET technology
- Maximum RDS(on) = 15 mΩ at VGS = 10 V, ID = 29 A
- Low RDS(on) for minimized conduction losses
- Low capacitance for minimized drive losses
- Optimized gate charge for minimized switching losses
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, halogen-free/BFR-free, RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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