MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
NVMFS5C430NLWFAFT1G-HXY
114W 40V 219A 1.2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- NVMFS5C430NLWFAFT1G-HXY
- Store part #
- C53263408
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,938 in stock
#C53263408
Stock & price checked 41 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹73.69 | ₹73.69 |
| 10+ | ₹59.52 | ₹595.20 |
| 30+ | ₹52.55 | ₹1,576.50 |
| 100+ | ₹45.56 | ₹4,556.00 |
| 500+ | ₹41.21 | ₹20,605.00 |
| 1,000+ | ₹39.03 | ₹39,030.00 |
1 × ₹73.69
₹73.69
excl. GST
₹86.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
NVMFS5C430NLWFAFT1G-HXY
₹73.69 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.257nF
- Ciss-Input Capacitance
- 6.461nF
- Pd - Power Dissipation
- 114W
- Configuration
- Standalone
- Operating Temperature
- -50℃~+150℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 219A
- Reverse Transfer Capacitance (Crss)
- 196pF
- RDS(on)
- 1.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 55nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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