MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
NVMFS5C646NLWFAFT1G-HXY
73.5W 60V 100A 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- NVMFS5C646NLWFAFT1G-HXY
- Store part #
- C51949324
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
37 in stock
#C51949324
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹231.74 | ₹231.74 |
| 10+ | ₹199.52 | ₹1,995.20 |
| 30+ | ₹179.33 | ₹5,379.90 |
| 100+ | ₹158.51 | ₹15,851.00 |
| 500+ | ₹149.05 | ₹74,525.00 |
| 1,000+ | ₹144.97 | ₹1,44,970.00 |
1 × ₹231.74
₹231.74
excl. GST
₹273.45 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
NVMFS5C646NLWFAFT1G-HXY
₹231.74 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 773pF
- Ciss-Input Capacitance
- 1.673nF
- Pd - Power Dissipation
- 73.5W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 100A
- Reverse Transfer Capacitance (Crss)
- 46.8pF
- RDS(on)
- 3.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28.5nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.9V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.147 g
Overview
NVMFS5C646NLWFAFT1G utilizes advanced SGT MOSFET technology, featuring low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage VDS = 60 V, drain current ID = 100 A
- On-resistance RDS(ON) < 5 mΩ at gate-source voltage VGS = 10 V
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | DMT6005LPS-13-HXY#C51949314HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 158 | ₹60.50 · 158 in stock | View |
 | SIR186LDP-T1-RE3-HXY#C51949316HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 368 | ₹109.28 · 368 in stock | View |
 | NTMFS5C646NLT3G-HXY#C51949325HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 99 | ₹231.74 · 99 in stock | View |
 | SIR186DP-T1-RE3-HXY#C53262845HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 97 | ₹103.52 · 97 in stock | View |
 | SIR184LDP-T1-RE3-HXY#C53262846HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 198 | ₹146.69 · 198 in stock | View |
Same category
