OPA1S2384IDRCR

The OPA1S2384 and OPA1S2385 (OPA1S238x) combine a high-bandwidth, field-effect transistor (FET) input op amp with a fast SPST CMOS switch, designed for applications requiring tracking and capturing of fast signals. By providing a 250MHz gain-bandwidth product operating from a single supply and a rail-to-rail input/output switch, the OPA1S238x enables both wideband transimpedance gain and large output signal swing simultaneously. Low input bias current and voltage noise (6nV/√Hz) allow amplification of very low-level input signals for maximum SNR. The characteristics of the OPA1S238x make this device ideally suited for use as a wideband photodiode amplifier. In addition, the CMOS switch and its following buffer amplifier allow the OPA1S238x to be easily configured as a fast sample-and-hold circuit. The external hold capacitor and post-stage gain options enable the OPA1S238x to readily accommodate a wide range of speed and accuracy requirements. Note that the OPA1S2384 uses a logic-high signal to close the internal switch, while the OPA1S2385 uses a logic-low signal to close the internal switch. The OPA1S238x is optimized for low-voltage operation from as low as +2.7V up to +5.5V. These devices are rated for a temperature range of -40°C to +85°C.

Applications

• Optical Networks: Ethernet Passive Optical Network (EPON), Gigabit Passive Optical Network (GPON)
• Signal strength monitor
• Burst-mode received signal strength indicator (RSSI)
• Photodiode monitoring
• Fast sample-and-hold circuit
• Charge amplifier
• High-speed integrator

Key features

• Wide bandwidth: 250MHz
• High slew rate: 150V/μs
• Rail-to-rail input/output (I/O)
• Fast settling
• Low input bias current: 3pA
• High input impedance: 10^13Ω || 2pF
• Low on-resistance: 4Ω
• Low charge injection: 1pC
• Low leakage current: 10pA
• Single supply: +2.7V to +5.5V
• Quiescent current: 9.2mA
• Small package: 3mm×3mm SON-10
• OPA1S2384: internal switch active high
• OPA1S2385: internal switch active low