MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
P0806ATX-VB
N-Channel 30V 120A 250W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 30V 120A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- P0806ATX-VB
- Store part #
- C22389374
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22389374
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹82.56 | ₹82.56 |
| 10+ | ₹66.39 | ₹663.90 |
| 50+ | ₹58.40 | ₹2,920.00 |
| 100+ | ₹50.42 | ₹5,042.00 |
| 500+ | ₹45.80 | ₹22,900.00 |
| 1,000+ | ₹43.28 | ₹43,280.00 |
1 × ₹82.56
₹82.56
excl. GST
₹97.42 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
P0806ATX-VB
₹82.56 for 1 + GST
Specifications
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+175℃
- Output Capacitance(Coss)
- 725pF
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 3.1nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 370pF
- RDS(on)
- 3mΩ@10V;4mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 171nC@10V;81.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1V;2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.16 g
Overview
Applications
- OR-ing diode function
- Servers
- DC-DC converters
Key features
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Compliant with EU RoHS Directive 2011/65/EU
Alternatives
Similar parts — check the datasheet before substituting.
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