MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
PSMN165-200K518-VB
96W 200V 3A 260mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs
SO-8RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- PSMN165-200K518-VB
- Store part #
- C52190885
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C52190885
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹82.73 | ₹82.73 |
| 10+ | ₹66.63 | ₹666.30 |
| 30+ | ₹59.65 | ₹1,789.50 |
| 100+ | ₹51.16 | ₹5,116.00 |
| 500+ | ₹42.46 | ₹21,230.00 |
| 1,000+ | ₹40.06 | ₹40,060.00 |
1 × ₹82.73
₹82.73
excl. GST
₹97.62 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
PSMN165-200K518-VB
₹82.73 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 180pF
- Ciss-Input Capacitance
- 1.8nF
- Pd - Power Dissipation
- 96W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 3A
- Reverse Transfer Capacitance (Crss)
- 80pF
- RDS(on)
- 260mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Applications
- Primary-side switch
Key features
- Trench power MOSFET
- Junction temperature 175 °C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant with directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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