MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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NexperiaDatasheet (PDF)
PSMN2R8-40YSDX
147W 40V 160A 2.8mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS
SOT-669ROHS3 CompliantActive
- Manufacturer
- Nexperia
- Manufacturer part #
- PSMN2R8-40YSDX
- Store part #
- C553266
- Package / case
- SOT-669
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C553266
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹393.37 | ₹393.37 |
| 10+ | ₹336.11 | ₹3,361.10 |
| 30+ | ₹300.41 | ₹9,012.30 |
| 100+ | ₹263.85 | ₹26,385.00 |
| 500+ | ₹247.30 | ₹1,23,650.00 |
| 1,500+ | ₹240.11 | ₹3,60,165.00 |
1 × ₹393.37
₹393.37
excl. GST
₹464.18 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,500 per reel
PSMN2R8-40YSDX
₹393.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 908pF
- Ciss-Input Capacitance
- 4.507nF
- Pd - Power Dissipation
- 147W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 160A
- Reverse Transfer Capacitance (Crss)
- 337pF
- RDS(on)
- 2.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 62nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.1V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.51 g
Overview
Advanced TrenchMOS super-junction technology, 160 A standard-level gate drive N-channel enhancement-mode MOSFET in a 175 °C LFPAK56 package. Designed and qualified for high-performance power switching applications.
Applications
- High-performance synchronous rectification DC-DC converter
- Brushless DC motor control
- Battery protection
- Load switch and electronic fuse
Key features
- Continuous ID (max) rating: 160 A
- Avalanche-rated, 100% tested at IAS = 150 A
- Robust SOA (linear mode) rating
- NextPower-S3 technology for "ultra-fast switching and soft body diode recovery"
- Low QRR, QG, and QGD for high system efficiency and low EMI design
- Schottky-enhanced body diode with low VSD, low QRR, soft recovery, and low IDSS leakage
- High-reliability LFPAK (Power SO8) package with copper clip and solder sheet connection, rated for operation at 175°C
- Exposed leads for wave soldering, enabling visual solder joint inspection with high solder joint quality
- Low parasitic inductance and resistance
Alternatives
Similar parts — check the datasheet before substituting.
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