MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
RQ3E150BNTB-HXY
46W 30V 90A 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- RQ3E150BNTB-HXY
- Store part #
- C53262999
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C53262999
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹65.29 | ₹65.29 |
| 10+ | ₹52.40 | ₹524.00 |
| 30+ | ₹46.82 | ₹1,404.60 |
| 100+ | ₹39.95 | ₹3,995.00 |
| 500+ | ₹36.73 | ₹18,365.00 |
| 1,000+ | ₹34.79 | ₹34,790.00 |
1 × ₹65.29
₹65.29
excl. GST
₹77.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
RQ3E150BNTB-HXY
₹65.29 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 277pF
- Ciss-Input Capacitance
- 2.088nF
- Pd - Power Dissipation
- 46W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 90A
- Reverse Transfer Capacitance (Crss)
- 209pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.09 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
 | BSZ0506NSATMA1-HXY#C53262972HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 74 | ₹73.45 · 74 in stock | View |
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 | RQ3E180GNTB-HXY#C53263006HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 35 | ₹42.96 · 35 in stock | View |
 | DMT35M7LFV-7-HXY#C53263007HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 48 | ₹75.61 · 48 in stock | View |
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