SCT011HU75G3AG

652W 750V 110A 11.4mΩ@18V 1 N-channel N-Channel HU3PAK Single FETs, MOSFETs RoHS

HU3PAKROHS3 CompliantActive

Manufacturer: ST
Manufacturer part #: SCT011HU75G3AG
Store part #: C26054884
Package / case: HU3PAK
Category: Single FETs, MOSFETs
Packaging: Bag-packed

Datasheet (PDF)

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7 in stock

#C26054884

Stock & price checked 34 h ago

Quantity	Unit price	Pack price
1+	₹7,677.58	₹7,677.58
30+	₹7,525.62	₹2,25,768.60

Quantity (min 1)

1 × ₹7,677.58

₹7,677.58

excl. GST

₹9,059.54 incl. 18% GST

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Standard pack: 600 per bag

SCT011HU75G3AG

₹7,677.58 for 1 + GST

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Specifications

Output Capacitance(Coss): 300pF
Ciss-Input Capacitance: 3.86nF
Pd - Power Dissipation: 652W
Drain to Source Voltage: 750V
Operating Temperature: -55℃~+175℃
Configuration: Standalone
Current - Continuous Drain(Id): 110A
Reverse Transfer Capacitance (Crss): 31pF
RDS(on): 11.4mΩ@18V
Number: 1 N-channel
Gate Charge(Qg): 154nC
Vgs: ±10V
Gate Threshold Voltage (Vgs(th)): 3.2V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Bag-packed
Standard pack: 600 / Bag
Sold per: Piece
Minimum order: 1
Unit weight: 2.34 g

Overview

This silicon carbide power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative 3rd generation SiC MOSFET technology. The device features an extremely low on-state resistance (RDS(on)) across the entire temperature range, along with low capacitance and excellent switching performance, enabling improvements in operating frequency, energy efficiency, system size reduction, and weight reduction for targeted applications.