MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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STDatasheet (PDF)
SCT012H90G3AG
110A 625W H2PAK-7 Single FETs, MOSFETs
H2PAK-7RoHSActive
- Manufacturer
- ST
- Manufacturer part #
- SCT012H90G3AG
- Store part #
- C5268811
- Package / case
- H2PAK-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C5268811
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹4,722.62 | ₹4,722.62 |
| 10+ | ₹4,610.21 | ₹46,102.10 |
1 × ₹4,722.62
₹4,722.62
excl. GST
₹5,572.69 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
SCT012H90G3AG
₹4,722.62 for 1 + GST
Specifications
- Current - Continuous Drain(Id)
- 110A
- Pd - Power Dissipation
- 625W
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.09 g
Overview
This SiC power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative 3rd generation SiC MOSFET technology. The device features an extremely low on-resistance (RDS(on)) across the full temperature range, combined with low capacitance and exceptional switching capability, enabling improved application performance in terms of frequency, energy efficiency, system size reduction, and weight savings.
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On-board charger (OBC)
Key features
- AEC-Q101 compliant
- Ultra-low RDS(on) across full temperature range
- High-speed switching performance
- Fast and robust intrinsic body diode
- Source sense pin for improved efficiency
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