MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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STDatasheet (PDF)
SCT040W65G3-4AG
650V 30A 240W 63mΩ 1 N-channel N-Channel HiP-247-4 Single FETs, MOSFETs RoHS
HiP-247-4ROHS3 CompliantActive
Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package
- Manufacturer
- ST
- Manufacturer part #
- SCT040W65G3-4AG
- Store part #
- C27014820
- Package / case
- HiP-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Bag-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C27014820
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,323.39 | ₹2,323.39 |
| 10+ | ₹2,219.53 | ₹22,195.30 |
| 30+ | ₹2,040.01 | ₹61,200.30 |
| 100+ | ₹1,883.25 | ₹1,88,325.00 |
1 × ₹2,323.39
₹2,323.39
excl. GST
₹2,741.60 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 600 per bag
SCT040W65G3-4AG
₹2,323.39 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+200℃
- Output Capacitance(Coss)
- 92pF
- Current - Continuous Drain(Id)
- 30A
- Ciss-Input Capacitance
- 860pF
- Pd - Power Dissipation
- 240W
- Reverse Transfer Capacitance (Crss)
- 13pF
- RDS(on)
- 63mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 37.5nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4.2V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Bag-packed
- Standard pack
- 600 / Bag
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
This silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Key features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200℃)
- Source sensing pin for increased efficiency
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
| CMHG65R090#C54443162Cmos · TO-247 | Cmos | TO-247 | 36 | ₹231.96 · 36 in stock | View | |
 | NTHL040N120M3S#C20625009onsemi · TO-247-3L | onsemi | TO-247-3L | 8 | ₹1,597.34 · 8 in stock | View |
 | IMW120R030M1H#C536280Infineon · TO-247-3 | Infineon | TO-247-3 | On request | ₹1,683.87 · 0 in stock | View |
 | HSCT3060AL#C42389107HXY MOSFET · TO-247 | HXY MOSFET | TO-247 | 4 | ₹988.64 · 4 in stock | View |
 | HSCTW35N65G2V#C42389133HXY MOSFET · TO-247-3 | HXY MOSFET | TO-247-3 | 14 | ₹1,013.80 · 14 in stock | View |
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