SCT070H120G3AG

223W 1.2kV 30A 63mΩ@18V 1 N-channel N-Channel H2PAK-7 Single FETs, MOSFETs RoHS

H2PAK-7ROHS CompliantActive

Manufacturer: ST
Manufacturer part #: SCT070H120G3AG
Store part #: C5268801
Package / case: H2PAK-7
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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16 in stock

#C5268801

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹1,520.74	₹1,520.74
10+	₹1,473.31	₹14,733.10

Quantity (min 1)

1 × ₹1,520.74

₹1,520.74

excl. GST

₹1,794.47 incl. 18% GST

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Standard pack: 1,000 per reel

SCT070H120G3AG

₹1,520.74 for 1 + GST

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Specifications

Output Capacitance(Coss): 40pF
Ciss-Input Capacitance: 900pF
Pd - Power Dissipation: 223W
Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 30A
Reverse Transfer Capacitance (Crss): 5pF
RDS(on): 63mΩ@18V
Number: 1 N-channel
Gate Charge(Qg): 37nC
Vgs: ±10V
Gate Threshold Voltage (Vgs(th)): 3V
Type: N-Channel

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 5.9 g

Overview

This silicon carbide power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative third-generation SiC MOSFET technology. The device features an extremely low on-resistance (RDS(on)) across the entire temperature range, combined with low capacitance and outstanding switching performance, enabling improved application performance in terms of operating frequency, energy efficiency, system size reduction, and weight savings.