SCT070W120G3AG

236W 1.2kV 30A 63mΩ@18V 1 N-channel N-Channel HiP247-3 Single FETs, MOSFETs

HiP247-3RoHSActive

Manufacturer: ST
Manufacturer part #: SCT070W120G3AG
Store part #: C22782170
Package / case: HiP247-3
Category: Single FETs, MOSFETs
Packaging: Bag-packed

Datasheet (PDF)

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9 in stock

#C22782170

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹1,896.27	₹1,896.27
10+	₹1,849.65	₹18,496.50

Quantity (min 1)

1 × ₹1,896.27

₹1,896.27

excl. GST

₹2,237.60 incl. 18% GST

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Standard pack: 600 per bag

SCT070W120G3AG

₹1,896.27 for 1 + GST

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Specifications

Output Capacitance(Coss): 40pF
Ciss-Input Capacitance: 900pF
Pd - Power Dissipation: 236W
Configuration: Standalone
Drain to Source Voltage: 1.2kV
Operating Temperature: -55℃~+200℃
Current - Continuous Drain(Id): 30A
Reverse Transfer Capacitance (Crss): 5pF
RDS(on): 63mΩ@18V
Number: 1 N-channel
Gate Charge(Qg): 41nC
Vgs: ±10V
Gate Threshold Voltage (Vgs(th)): 3V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Bag-packed
Standard pack: 600 / Bag
Sold per: Piece
Minimum order: 1
Unit weight: 9.07 g

Overview

This silicon carbide power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative 3rd generation SiC MOSFET technology. The device features ultra-low on-state resistance (RDS(on)) across the entire temperature range, combined with low capacitance and exceptional switching performance, enabling improvements in application performance in terms of frequency, energy efficiency, system size, and weight reduction.