Varnitronics
SCT1000N170 ST
ST

SCT1000N170

1.7kV 7A 96W 1.3Ω 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

TO-247-3ROHS3 CompliantActive

Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

Manufacturer
ST
Manufacturer part #
SCT1000N170
Store part #
C2970166
Package / case
TO-247-3
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

59 in stock

#C2970166

Stock & price checked 7 days ago

QuantityUnit pricePack price
1+₹794.12₹794.12
10+₹684.06₹6,840.60
30+₹616.76₹18,502.80
90+₹560.53₹50,447.70

1 × ₹794.12

₹794.12

excl. GST

₹937.06 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
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  • GST invoice with every order
  • Standard pack: 30 per tube

SCT1000N170

₹794.12 for 1 + GST

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Specifications

Operating Temperature
-55℃~+200℃
Drain to Source Voltage
1.7kV
Current - Continuous Drain(Id)
7A
Ciss-Input Capacitance
133pF
Pd - Power Dissipation
96W
Reverse Transfer Capacitance (Crss)
3.4pF
RDS(on)
1.3Ω
Number
1 N-channel
Gate Charge(Qg)
13.3nC
Gate Threshold Voltage (Vgs(th))
3.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
30 / Tube
Sold per
Piece
Minimum order
1
Unit weight
6.3 g

Overview

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Applications

  • Auxiliary power supply for server
  • Switch mode power supply

Key features

  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (T_J = 200 ℃)

Alternatives

Similar parts — check the datasheet before substituting.

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CI7N220SM#C42391832Tokmas · TO-247-3₹392.63 · 203 in stockView
IMWH170R650M1XKSA1#C29064492Infineon · TO-247-3₹887.64 · 18 in stockView
CI7N170SM#C2842690Tokmas · TO-247-3₹536.95 · 1,102 in stockView
LGE3M650170B#C42372481LGE · TO-247-3₹685.13 · 30 in stockView

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