SCTL35N65G2V

N-Channel 650V 40A 417W Surface Mount VDFN-8-Power

VDFN-8-PowerROHS3 CompliantActive

SICFET N-CH 650V 40A VDFN-8-Power

Manufacturer: ST
Manufacturer part #: SCTL35N65G2V
Store part #: C2970385
Package / case: VDFN-8-Power
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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6 in stock

#C2970385

Stock & price checked 43 h ago

Quantity	Unit price	Pack price
1+	₹2,272.42	₹2,272.42
10+	₹2,195.81	₹21,958.10

Quantity (min 1)

1 × ₹2,272.42

₹2,272.42

excl. GST

₹2,681.46 incl. 18% GST

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Standard pack: 3,000 per reel

SCTL35N65G2V

₹2,272.42 for 1 + GST

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Specifications

Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 650V
Output Capacitance(Coss): 125pF
Current - Continuous Drain(Id): 40A
Ciss-Input Capacitance: 1.37nF
Pd - Power Dissipation: 417W
Reverse Transfer Capacitance (Crss): 30pF
RDS(on): 67mΩ
Number: 1 N-channel
Gate Charge(Qg): 73nC
Gate Threshold Voltage (Vgs(th)): 5V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.246 g

Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nα generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.