MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

650V 45A 208W 67mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C3281008
Stock & price checked 34 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,022.27 | ₹2,022.27 |
| 10+ | ₹1,931.83 | ₹19,318.30 |
| 30+ | ₹1,775.56 | ₹53,266.80 |
| 100+ | ₹1,639.06 | ₹1,63,906.00 |
1 × ₹2,022.27
₹2,022.27
excl. GST
₹2,386.28 incl. 18% GST
SCTWA35N65G2V
₹2,022.27 for 1 + GST
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
![]() | STW65N65DM2AG-HXY#C53134073HXY MOSFET · TO-247 | HXY MOSFET | TO-247 | 19 | ₹1,011.38 · 19 in stock | View |
![]() | NTHL060N065SC1#C5209039onsemi · TO-247-3LD | onsemi | TO-247-3LD | 1 | ₹1,128.78 · 1 in stock | View |
| NCES075P042T#C54425828NCE · TO-247-3L | NCE | TO-247-3L | 280 | ₹322.63 · 280 in stock | View | |
![]() | NCES090P050T#C54425837NCE · TO-247-3L | NCE | TO-247-3L | 378 | ₹322.63 · 378 in stock | View |
![]() | IPW65R045C7300XKSA1-HXY#C53134032HXY MOSFET · TO-247 | HXY MOSFET | TO-247 | 8 | ₹896.28 · 8 in stock | View |
Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock