MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
SI3460DDV-T1-GE3-VB
N-Channel 30V 6A 2.5W Surface Mount TSOP-6
TSOP-6RoHSActive
MOSFET N-CH 30V 6A TSOP-6
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI3460DDV-T1-GE3-VB
- Store part #
- C18212453
- Package / case
- TSOP-6
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
90 in stock
#C18212453
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹30.64 | ₹153.20 |
| 50+ | ₹24.32 | ₹1,216.00 |
| 150+ | ₹21.60 | ₹3,240.00 |
| 500+ | ₹18.23 | ₹9,115.00 |
| 3,000+ | ₹16.72 | ₹50,160.00 |
| 6,000+ | ₹15.82 | ₹94,920.00 |
5 × ₹30.64
₹153.20
excl. GST
₹180.78 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SI3460DDV-T1-GE3-VB
₹153.20 for 5 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 100pF
- Current - Continuous Drain(Id)
- 6A
- Ciss-Input Capacitance
- 424pF
- Pd - Power Dissipation
- 2.5W
- Reverse Transfer Capacitance (Crss)
- 42pF
- RDS(on)
- 23mΩ@10V;27mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 8.2nC@10V;4.2nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.024 g
Overview
Applications
- DC-DC converter, high-speed switching
Key features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Low on-resistance
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
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Similar parts — check the datasheet before substituting.
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