MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SI4532DY-T1-GE3-VB
N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8
SO-8RoHSActive
MOSFET N-CH+P-CH ARR 30V 8A SO-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI4532DY-T1-GE3-VB
- Store part #
- C22389136
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C22389136
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹64.23 | ₹64.23 |
| 10+ | ₹52.91 | ₹529.10 |
| 30+ | ₹48.12 | ₹1,443.60 |
| 100+ | ₹42.02 | ₹4,202.00 |
| 500+ | ₹29.83 | ₹14,915.00 |
| 1,000+ | ₹28.09 | ₹28,090.00 |
1 × ₹64.23
₹64.23
excl. GST
₹75.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
SI4532DY-T1-GE3-VB
₹64.23 for 1 + GST
Specifications
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 8A
- Output Capacitance(Coss)
- 115pF
- Ciss-Input Capacitance
- 620pF
- Pd - Power Dissipation
- 3.1W
- Reverse Transfer Capacitance (Crss)
- 57pF
- RDS(on)
- 18mΩ@10V;40mΩ@10V
- Number
- 1 N-Channel + 1 P-Channel
- Gate Charge(Qg)
- 63nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel + P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.195 g
Overview
Applications
- Motor Drive - Power Bank
Key features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rq and UIS tested
- Compliant with RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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