MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SI7111EDN-T1-GE3
P-Channel 30V 60A 33.3W Surface Mount PowerPAK-1212-8
PowerPAK-1212-8ROHS3 CompliantActive
MOSFET P-CH 30V 60A PowerPAK-1212-8
- Manufacturer
- VISHAY
- Manufacturer part #
- SI7111EDN-T1-GE3
- Store part #
- C5690133
- Package / case
- PowerPAK-1212-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3 in stock
#C5690133
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹288.22 | ₹288.22 |
| 10+ | ₹244.99 | ₹2,449.90 |
| 30+ | ₹217.63 | ₹6,528.90 |
| 100+ | ₹189.82 | ₹18,982.00 |
| 500+ | ₹177.23 | ₹88,615.00 |
| 1,000+ | ₹171.80 | ₹1,71,800.00 |
1 × ₹288.22
₹288.22
excl. GST
₹340.10 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SI7111EDN-T1-GE3
₹288.22 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 412pF
- Ciss-Input Capacitance
- 5.86nF
- Pd - Power Dissipation
- 33.3W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 395pF
- RDS(on)
- 8.55mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 30.5nC@4.5V
- Vgs
- ±12V
- Gate Threshold Voltage (Vgs(th))
- 600mV
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.065 g
Overview
This next-generation N-channel enhancement-mode MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance. The device is ideal for notebook battery power management and load switching applications.
Applications
- Battery switch
- Adapter and charger switch
- Load switch
- Battery management in mobile devices
Key features
- RoHS COMPLIANT HALOGEN FREE
- TrenchFET Gen III p-channel power MOSFET
- RDS(on) rating at VGS = -2.5 V
- 100 % Rg and UIS tested CAM
- Typical ESD protection: 4600 V HBM
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Similar parts — check the datasheet before substituting.
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