HXY MOSFET

SI7155DP-T1-GE3-HXY

200W 40V 100A 3.1mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS

DFN-8L(5x6)ROHS CompliantActive

Manufacturer: HXY MOSFET
Manufacturer part #: SI7155DP-T1-GE3-HXY
Store part #: C52174718
Package / case: DFN-8L(5x6)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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231 in stock

#C52174718

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹187.55	₹187.55
10+	₹157.85	₹1,578.50
30+	₹141.59	₹4,247.70
100+	₹123.16	₹12,316.00
500+	₹114.92	₹57,460.00
1,000+	₹111.24	₹1,11,240.00

Quantity (min 1)

1 × ₹187.55

₹187.55

excl. GST

₹221.31 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 5,000 per reel

SI7155DP-T1-GE3-HXY

₹187.55 for 1 + GST

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Specifications

Output Capacitance(Coss): 770pF
Ciss-Input Capacitance: 10.733nF
Pd - Power Dissipation: 200W
Configuration: Standalone
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 100A
Reverse Transfer Capacitance (Crss): 697pF
RDS(on): 3.1mΩ@10V
Number: 1 P-Channel
Gate Charge(Qg): 195nC@10V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 2.5V
Type: P-Channel

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 5,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.169 g

Overview

The SI7155DP-T1-GE3 employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Applications

Battery protection
Load switch
Uninterruptible power supply

Key features

VDS = -40 V
ID = -100 A
RDS(ON) < 4.1 mΩ (VGS = -10 V)

Alternatives

Similar parts — check the datasheet before substituting.

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