MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SI7788DP-T1-GE3-VB
N-Channel 30V 120A 35W Surface Mount DFN5x6-8
DFN5x6-8ROHS CompliantActive
MOSFET N-CH 30V 120A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI7788DP-T1-GE3-VB
- Store part #
- C7524892
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C7524892
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹104.40 | ₹104.40 |
| 10+ | ₹84.24 | ₹842.40 |
| 30+ | ₹74.37 | ₹2,231.10 |
| 100+ | ₹64.28 | ₹6,428.00 |
| 500+ | ₹56.93 | ₹28,465.00 |
| 1,000+ | ₹53.99 | ₹53,990.00 |
1 × ₹104.40
₹104.40
excl. GST
₹123.19 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7788DP-T1-GE3-VB
₹104.40 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 1.025nF
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 3.2nF
- Pd - Power Dissipation
- 35W
- Reverse Transfer Capacitance (Crss)
- 970pF
- RDS(on)
- 3mΩ@10V;5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.148 g
Overview
AGM18N10S combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). The device is ideal for load switch and battery protection applications.
Applications
- Notebook computer core
- Voltage Regulator Module / Point-of-Load power supply
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
Alternatives
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