MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SI7852DP-T1-GE3-VB
N-Channel 100V 30A 60W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 100V 30A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SI7852DP-T1-GE3-VB
- Store part #
- C19188108
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
35 in stock
#C19188108
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹232.50 | ₹232.50 |
| 10+ | ₹197.89 | ₹1,978.90 |
| 30+ | ₹178.95 | ₹5,368.50 |
| 100+ | ₹157.40 | ₹15,740.00 |
| 500+ | ₹124.31 | ₹62,155.00 |
| 1,000+ | ₹120.17 | ₹1,20,170.00 |
1 × ₹232.50
₹232.50
excl. GST
₹274.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SI7852DP-T1-GE3-VB
₹232.50 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 132pF
- Current - Continuous Drain(Id)
- 30A
- Ciss-Input Capacitance
- 1.47nF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 11.2pF
- RDS(on)
- 17mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.38 g
Overview
Applications
- Isolated DC/DC Converter
Key features
- Trench power MOSFET
- Junction temperature up to 175 °C
- Low thermal resistance package
- 100% gate resistance (Rg) tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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