Varnitronics
SI9801DY-T1-E3-JSM JSMSEMI
JSMSEMI

SI9801DY-T1-E3-JSM

N-Channel+P-Channel Array 30V 7.2A 2W Surface Mount SOP-8

SOP-8ROHS CompliantActive

MOSFET N-CH+P-CH ARR 30V 7.2A SOP-8

Manufacturer
JSMSEMI
Manufacturer part #
SI9801DY-T1-E3-JSM
Store part #
C7462826
Package / case
SOP-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

910 in stock

#C7462826

Stock & price checked 5 days ago

QuantityUnit pricePack price
5+₹38.53₹192.65
50+₹30.69₹1,534.50
150+₹27.35₹4,102.50
500+₹23.17₹11,585.00
3,000+₹21.30₹63,900.00
6,000+₹20.19₹1,21,140.00

5 × ₹38.53

₹192.65

excl. GST

₹227.33 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

SI9801DY-T1-E3-JSM

₹192.65 for 5 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
7.2A
Ciss-Input Capacitance
373pF
Pd - Power Dissipation
2W
Reverse Transfer Capacitance (Crss)
41pF
Number
1 N-Channel + 1 P-Channel
Gate Charge(Qg)
7.2nC@10V
Gate Threshold Voltage (Vgs(th))
1V

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.12 g

Overview

The SI9801DY-T1-E3 uses advanced trench technology MOSFETs to provide excellent RDS (ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.

Key features

  • n-channel
  • VDS (V) = 30V
  • ID = 7.2A (VGS = 10V)
  • ID = -6.8A (VGS = -10V)
  • RDS(ON) = 20mΩ (VGS = 10V)
  • RDS(ON) = 36mΩ (VGS = -10V)
  • RDS(ON) = 30mΩ (VGS = 4.5V)
  • RDS(ON) = 48mΩ (VGS = -4.5V)
  • 100% UIS tested
  • 100% Rg tested
  • ESD rating--HBM1b, MSL Rating--MSL Level2

Alternatives

Similar parts — check the datasheet before substituting.

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