MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIHA15N50E-GE3-HXY
500V 20A 165W 260mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIHA15N50E-GE3-HXY
- Store part #
- C54582622
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
24 in stock
#C54582622
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹239.22 | ₹239.22 |
| 10+ | ₹201.40 | ₹2,014.00 |
| 50+ | ₹164.86 | ₹8,243.00 |
| 100+ | ₹141.43 | ₹14,143.00 |
| 500+ | ₹130.90 | ₹65,450.00 |
| 1,000+ | ₹126.17 | ₹1,26,170.00 |
1 × ₹239.22
₹239.22
excl. GST
₹282.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SIHA15N50E-GE3-HXY
₹239.22 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 500V
- Output Capacitance(Coss)
- 25pF
- Current - Continuous Drain(Id)
- 20A
- Pd - Power Dissipation
- 165W
- RDS(on)
- 260mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 63nC@10V
- Vgs
- ±30V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.756 g
Overview
The SIHA15N50E-GE3 is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. Available in TO-220F package, RoHS compliant.
Applications
- Power switching circuit for adapters and chargers.
Key features
- Drain-source voltage VDS = 500V, drain current ID = 20A
- On-resistance RDS(ON) < 0.3Ω at gate-source voltage VGS = 10V
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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