MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SiHB22N65E-VB
N-Channel 650V 20A 180W Surface Mount TO-263(D2PAK)
TO-263(D2PAK)RoHSActive
MOSFET N-CH 650V 20A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHB22N65E-VB
- Store part #
- C22357277
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C22357277
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹303.14 | ₹303.14 |
| 10+ | ₹256.20 | ₹2,562.00 |
| 50+ | ₹226.64 | ₹11,332.00 |
| 100+ | ₹196.44 | ₹19,644.00 |
| 500+ | ₹182.76 | ₹91,380.00 |
| 1,000+ | ₹176.89 | ₹1,76,890.00 |
1 × ₹303.14
₹303.14
excl. GST
₹357.71 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SiHB22N65E-VB
₹303.14 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 80pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 2.6nF
- Pd - Power Dissipation
- 180W
- RDS(on)
- 160mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.84 g
Overview
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
Key features
- Low figure-of-merit (FOM) Ron×Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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