MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SiHP6N80E-VB
N-Channel 800V 6A 650W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 800V 6A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SiHP6N80E-VB
- Store part #
- C22357309
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C22357309
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹261.45 | ₹261.45 |
| 10+ | ₹222.70 | ₹2,227.00 |
| 50+ | ₹174.38 | ₹8,719.00 |
| 100+ | ₹150.44 | ₹15,044.00 |
| 500+ | ₹139.55 | ₹69,775.00 |
| 1,000+ | ₹134.76 | ₹1,34,760.00 |
1 × ₹261.45
₹261.45
excl. GST
₹308.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SiHP6N80E-VB
₹261.45 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Output Capacitance(Coss)
- 80pF
- Current - Continuous Drain(Id)
- 6A
- Ciss-Input Capacitance
- 1.3nF
- Pd - Power Dissipation
- 650W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 800mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 9.6nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 5.96 g
Overview
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Key features
- Low figure-of-merit (FOM) Rₒₙ × Q₉
- Low input capacitance (Cᵢₛₛ)
- Reduced switching and conduction losses
- Ultra low gate charge (Q₉)
- Avalanche energy rated (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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